| PART |
Description |
Maker |
| HYB25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
|
Infineon
|
| HYB25D256161CE-4.0 HYB25D256161CE-5.0 |
Specialty DRAMs - 250MHz (16Mx16)
Specialty DRAMs - 200MHz (16Mx16)
|
Infineon
|
| M464S1654BT1-C1H M464S1654BT1-C1L M464S1654BT1-L1L |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM
16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| HY5DU56422AT HY5DU56422ALT HY5DU561622AT |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
|
Hynix Semiconductor, Inc.
|
| K4X56163PI-FE K4X56163PI-FG |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PI-LFE/GC3 K4X56163PI-LFE/GC6 |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| IS43R16160B-6BL IS43R16160B-5BLI IS43R16160B-5BL-T |
32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| MR18R16224/8/GAF0 |
(16Mx16)*2(4/8/16)pcs RIMMModule based on 256Mb A-die Data Sheet
|
Samsung Electronic
|
